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MTP3055VL
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 μ Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
Gate ? Body Leakage Current (V GS = ± 15 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
60
?
?
?
?
?
62
?
?
?
?
?
10
100
100
Vdc
mV/ ° C
μ Adc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V DS = V GS , I D = 250 μ Adc)
Temperature Coefficient (Negative)
Static Drain ? Source On ? Resistance (V GS = 5.0 Vdc, I D = 6.0 Adc)
Drain ? Source On ? Voltage (V GS = 5.0 Vdc)
(I D = 12 Adc)
(I D = 6.0 Adc, T J = 150 ° C)
Forward Transconductance (V DS = 8.0 Vdc, I D = 6.0 Adc)
V GS(th)
R DS(on)
V DS(on)
g FS
1.0
?
?
?
?
5.0
1.6
3.0
0.12
1.6
?
8.8
2.0
?
0.18
2.6
2.5
?
Vdc
mV/ ° C
Ohm
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
410
114
21
570
160
40
pF
SWITCHING CHARACTERISTICS (Note 2)
Turn ? On Delay Time
t d(on)
?
9.0
20
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 30 Vdc, I D = 12 Adc,
V GS = 5.0 Vdc,
R G = 9.1 Ω )
t r
t d(off)
t f
?
?
?
85
14
43
190
30
90
Gate Charge
(See Figure 8)
(V DS = 48 Vdc, I D = 12 Adc,
V GS = 5.0 Vdc)
Q T
Q 1
Q 2
?
?
?
8.1
1.8
4.2
10
?
?
nC
Q 3
?
3.8
?
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage (Note 1)
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored
Charge
(I S = 12 Adc, V GS = 0 Vdc)
(I S = 12 Adc, V GS = 0 Vdc, T J = 150 ° C)
(I S = 12 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ μ s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
0.97
0.86
55.7
37
18.7
0.116
1.3
?
?
?
?
?
Vdc
ns
μ C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
L D
?
3.5
?
nH
(Measured from the drain lead 0.25 ″ from package to center of die)
4.5
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L S
?
7.5
?
nH
1. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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2
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